Method For FinFET Fabrication And Structure Thereof

Abstract: a method includes forming a semiconductor fin protruding from a substrate and depositing a dielectric layer over the substrate. the dielectric layer has a first portion deposited on a first sidewall of the semiconductor fin and a second portion deposited on the second sidewall of the semiconductor fin. the method further includes implanting impurities into the first and second portions of the dielectric layer. the impurities reach a first depth in the first portion of the dielectric layer and a second depth in the second portion of the dielectric layer. the first depth is smaller than the second depth. the method further includes recessing the dielectric layer to expose the first and second sidewalls of the semiconductor fin.

Inventor(s): Han-Yu Lin, Akira Mineji, Chao-Hsien Huang, Pinyen Lin, Yi-Ruei Jhan, Fang-Wei Lee, Tze-Chung Lin, Li-Te Lin

CPC Classification: H10D84/038 (No explanation available)

Search for rejections for patent application number 20250185346