SEMICONDUCTOR DEVICE

Abstract: a semiconductor device that includes a first conductor (), a second conductor (), a first transistor () over a first insulator, and a second insulator () over the first insulator is provided. the first transistor includes a third conductor () and a fourth conductor () that are each electrically connected to a first metal oxide (), a third insulator () over the first metal oxide, and a fifth conductor () over the third insulator. the fourth conductor includes a second layer over a first layer. the top surface of the fifth conductor includes a region in contact with the second insulator. the first conductor includes a portion positioned inside an opening of the first insulator, a region in contact with a side surface of the third conductor, and a portion positioned inside an opening of the second insulator. the second conductor includes a region in contact with the second layer and a portion positioned inside an opening of the second insulator. the top surface of the first conductor and the top surface of the second conductor are level with each other.

Inventor(s): Ryota HODO, Masaru NAKANO, Naoki OKUNO, Hiromi SAWAI

CPC Classification: H10D64/665 (No explanation available)

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