SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE

Abstract: a semiconductor device having a large storage capacity per unit area is provided. the semiconductor device includes a memory transistor. the memory transistor includes a conductor including an opening, a first insulator provided in contact with an inner side of the opening, a second insulator provided in contact with an inner side of the first insulator, a third insulator provided in contact with an inner side of the second insulator, a first oxide provided in contact with an inner side of the third insulator, and a second oxide provided in contact with an inner side of the first oxide. an energy gap of the second oxide is narrower than an energy gap of the first oxide.

Inventor(s): Shunpei YAMAZAKI

CPC Classification: H10D62/80 (No explanation available)

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