DISCONNECTED GATE DIELECTRIC FOR TRANSISTORS

Abstract: a semiconductor device is provided. the semiconductor device includes a substrate, first and second field effect transistors (fets) of opposite polarity, the first fet being disposed on a first side of the substrate and including first work function metal (wfm) and the second fet being disposed on a second side of the substrate and including second wfm, a first gate dielectric disposed over at least the first side of the substrate and a second gate dielectric disconnected from the first gate dielectric and disposed over at least the second side of the substrate. the second wfm is aligned with the second gate dielectric and the first wfm extends beyond the first gate dielectric.

Inventor(s): Ruqiang Bao, Effendi Leobandung

CPC Classification: H10D62/364 (No explanation available)

Search for rejections for patent application number 20250185321