SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME

Abstract: a semiconductor device includes a channel layer comprising a semiconductor material, a ferroelectric layer disposed on the channel layer and comprising a ferroelectric material, a gate electrode disposed on the ferroelectric layer, a first insulating layer disposed between the ferroelectric layer and the gate electrode, a charge trap layer disposed between the ferroelectric layer and the first insulating layer and comprising a matrix material and a plurality of nano-crystals embedded in the matrix material, and a second insulating layer disposed between the channel layer and the ferroelectric layer. a center of an overall arrangement of the plurality of nano-crystals is located in an area closer to the ferroelectric layer than a first insulating layer in an area of the charge trap layer.

Inventor(s): Donghoon KIM, Seunggeol NAM, Sijung YOO, Hyunjae LEE

CPC Classification: H10D30/69 (No explanation available)

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