SEMICONDUCTOR DEVICE AND OXIDE SEMICONDUCTOR THIN FILM

Abstract: provided are a semiconductor thin film and a semiconductor device including the same. the semiconductor device includes an oxide semiconductor layer having an amorphous phase and including tin (sn) and a metal element other than tin (sn), wherein a content of tin (sn) is greater than 50 at % of a total content of tin (sn) and the metal element other than tin (sn), a first electrode and a second electrode disposed on the oxide semiconductor layer and spaced apart from each other, a gate electrode spaced apart from the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode.

Inventor(s): Kwanghee LEE, Jin-Seong PARK, Sangwook KIM, Youngkwan CHA, Seong-Hwan RYU, Hyemi KIM

CPC Classification: H10D30/6756 (No explanation available)

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