METAL GATE RECESS STOP FOR GATE-ALL-AROUND FIELD EFFECT TRANSISTORS

Abstract: a gate-all-around (gaa) field effect transistor (fet) structure and method for making the same is disclosed. in an aspects, a gaa fet includes a gate structure, extending in a first horizontal direction and disposed between first and second source/drain (s/d) epitaxial (epi) structures and having a vertical metal gate structure with a first portion containing a set of vertically-stacked, horizontal channels connecting the first and second epi s/d structures through the vertical metal gate structure, and a second portion having no channels. the gaa fet also includes a metal gate recess stop structure extending in the first horizontal direction and disposed above the first portion of the vertical metal gate structure, and a frontside inter-layer dielectric (ild) layer disposed above the vertical metal gate structure and the first metal gate recess stop structure.

Inventor(s): Kwanyong LIM, Hyunwoo PARK, Junjing BAO, Chih-Sung YANG, Ming-Huei LIN, Haining YANG

CPC Classification: H10D30/6735 (No explanation available)

Search for rejections for patent application number 20250185297