SEMICONDUCTOR DEVICE AND METHOD FOR PREPARING SAME

Abstract: the present disclosure provides a semiconductor device and a method for preparing same. the semiconductor device includes a substrate, a source, a semiconductor layer, a drain, an insulating layer, and a gate. a main body portion of the source and a main body portion of the drain are disposed on different faces. the semiconductor layer is disposed between the source and the drain. the gate is disposed on a side of the semiconductor layer. therefore, a vertical channel thin film transistor (tft) is formed. in this way, the mobility of carriers in the tft and the performance of the semiconductor device are effectively improved.

Inventor(s): Daobing HU

CPC Classification: H10D30/6728 (No explanation available)

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