TRENCH POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

Abstract: a trench power semiconductor device comprising a silicon carbide drain layer, a silicon carbide drift layer over the silicon carbide drain layer and a first silicon layer over the silicon carbide drift layer. a second silicon layer over the first silicon layer with a source silicon carbide layer over the second silicon layer. a trench formed through the source silicon carbide layer, through the second silicon layer and into at least partially the first silicon layer. a gate terminal contact formed on the trench with a drain terminal contact formed on the silicon carbide drain layer.

Inventor(s): Shesh Mani Pandey, Randy L. Yach, Bruce Odekirk

CPC Classification: H10D30/668 (No explanation available)

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