LATERALLY DIFFUSED METAL-OXIDE SEMICONDUCTOR (LDMOS) TRANSISTOR WITH INTEGRATED BACK-GATE

Abstract: described examples include an integrated circuit having a transistor with a first gate on a first gate insulating layer. the transistor also has second gate separated from the first gate by a gate gap. the integrated circuit also includes a channel well at the gate gap extending under the first gate and the second gate. the transistor has a first source in the channel adjacent to an edge of the first gate. the transistor having a second source formed in the channel adjacent to an edge of the second gate separated from the first source by a channel gap. the transistor has at least one back-gate contact, the at least one back-gate contact separated from the first gate by a first back-gate contact gap and separated from the second gate by a second back-gate contact gap.

Inventor(s): Gang Xue, Pushpa Mahalingam, Alexei Sadovnikov

CPC Classification: H10D30/65 (No explanation available)

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