SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Abstract: a semiconductor substrate includes a p-type substrate region, an n-type buried layer on the p-type substrate region, and a p-type semiconductor layer on the n-type buried layer. in the semiconductor layer, an n-type semiconductor region is formed so as to surround a transistor in plan view and to reach the n-type buried layer from a main surface of the semiconductor substrate. a dti region is formed so as to penetrate through the n-type semiconductor region and the n-type buried layer and reach the p-type substrate region.

Inventor(s): Makoto KOSHIMIZU, Tohru KAWAI, Yasutaka NAKASHIBA, Tomonari YAMAGUCHI

CPC Classification: H10D30/65 (No explanation available)

Search for rejections for patent application number 20250185281