20250185277. Multi-gate Switch Field Effect (Wolfspeed, .)

MULTI-GATE SWITCH FIELD EFFECT TRANSISTOR

Abstract: a multi-gate switch field effect transistor, fet, according to some embodiments includes a semiconductor structure, a source contact on the semiconductor structure, and a drain contact on the semiconductor structure. the multi-gate switch fet further includes a first gate on the semiconductor structure between the source contact and the drain contact; and a second gate on the semiconductor structure adjacent to the first gate and between the source contact and the drain contact. the multi-gate switch fet further includes a conducting region in the semiconductor structure between the first gate and the second gate.

Inventor(s): Kyle Bothe, Tom Smith

CPC Classification: H10D30/4755 (No explanation available)

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