20250185268. Semiconductor Devices Methods Fabrication Ther (Taiwan Semiconductor Manufacturing , .)
SEMICONDUCTOR DEVICES AND METHODS OF FABRICATION THEREOF
Abstract: embodiments of the present disclosure provide a method for forming semiconductor devices. particularly, embodiments of the present disclosure provide a method for incorporating a filler element to a high-k dielectric layer in a gate structure. the filler element reduces vacancies in the high-k dielectric layer, thereby, improving threshold voltage control and device performance.
Inventor(s): Shang-Rong LI, Chih-Wei LEE
CPC Classification: H10D30/014 (No explanation available)
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