20250185251. Method Forming Semiconductor Memory Structu (TAIWAN SEMICONDUCTOR MANUFACTURING .)

METHOD FOR FORMING SEMICONDUCTOR MEMORY STRUCTURE

Abstract: a semiconductor memory structure includes a substrate, a doped region in the substrate, a stack over the substrate, a column disposed over the substrate and penetrating the stack, a ferroelectric layer, and semiconductor layer between the ferroelectric layer and the column. the stack includes a plurality of conductive layers and a plurality of insulating layer alternately stacked. the column includes an isolation structure, a source structure and a drain structure. the semiconductor layer is separated from the substrate by the ferroelectric layer.

Inventor(s): NUO XU, SAI-HOOI YEONG, YU-MING LIN, ZHIQIANG WU

CPC Classification: H10B51/30 (ELECTRONIC MEMORY DEVICES)

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