INTEGRATED CIRCUIT DEVICE AND ELECTRONIC SYSTEM INCLUDING THE SAME

Abstract: a cell array structure of an integrated circuit device includes a gate stack including gate electrodes and mold insulation layers, which extend in a horizontal direction and are alternately stacked in a vertical direction, a channel structure extending in the vertical direction in the gate stack including a channel layer and a gate insulation layer conformally covering the channel layer, the gate stack and gate insulation layer exposing a portion of an upper surface of the channel layer, an insulation pattern layer disposed on the gate stack, and the gate insulation layer and exposing the portion of the upper surface of the channel layer, and a common source line structure contacting the gate insulation layer, the insulation pattern layer, and the upper surface of the channel layer, wherein a sidewall of the common source line structure disposed in the gate stack has a staircase shape.

Inventor(s): Minyong Lee, Shinhwan Kang, Joonyoung Kwon, Jiyoung Kim, Sukkang Sung, Byungchul Lee

CPC Classification: H10B43/27 (ELECTRONIC MEMORY DEVICES)

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