ANTI-FUSE DEVICE AND METHOD

Abstract: an ic device includes an active area extending in a first direction in a substrate, first and second transistors including respective first and second gates and respective first and second portions of the active area, an anti-fuse device including a third portion of the active area between and adjacent to each of the first and second portions of the active area, and a first conductive element extending in the first direction and overlying and electrically connected to each of the first gate and the second gate.

Inventor(s): Min-Shin WU, Meng-Sheng CHANG, Shao-Yu CHOU, Yao-Jen YANG

CPC Classification: H10B20/20 (Programmable ROM [PROM] devices comprising field-effect components ( takes precedence))

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