SEMICONDUCTOR DEVICE WITH ASSISTANCE FEATURES AND METHOD FOR FABRICATING THE SAME

Abstract: the present application discloses a semiconductor device and a method for fabricating the semiconductor device. the semiconductor device includes a substrate; a first contact positioned on the substrate; a first assistance feature including: a bottom portion positioned in the first contact, and a capping portion positioned on the bottom portion and on a top surface of the first contact; a second contact positioned on the substrate and separated from the first contact; and a second assistance feature positioned on the second contact. the first assistance feature and the second assistance feature include germanium or silicon germanium.

Inventor(s): TSE-YAO HUANG

CPC Classification: H10B12/485 (ELECTRONIC MEMORY DEVICES)

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