EUV Light Source Target Metrology

Abstract: disclosed is a system for and method of performing target metrology in an extreme ultraviolet light source in which illumination for a target imaging/detection system is selected to have a center wavelength less than 400 nm. in some embodiments the illumination is additionally selected to have a line width of at least 4 nm. in some embodiments illumination is obtained as a second harmonic of a ti:sapphire laser or as a harmonic of an nd:yag laser.

Inventor(s): Yezheng Tao, Jaden Robert Bankhead, Sylvi Haendel, Eric Huang, Erik Peter Farr

CPC Classification: H05G2/0086 (Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma (X-ray lasers ))

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