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20250183854. Semiconductor Device (RichWave Technology .)

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SEMICONDUCTOR DEVICE HAVING IMPROVED NOISE FIGURE AND OPTIMIZED TRANSIENT RESPONSE

Abstract: a semiconductor device includes a first set of transistors and a second set of transistors. the first set of transistors includes a first terminal, a second terminal, a control terminal and a bulk terminal, and the bulk terminal of the first set of transistors is floating. the second set of transistors includes a first terminal, a second terminal, a control terminal and a bulk terminal, and the first terminal, the second terminal and the control terminal of the second set of transistors being coupled to the first terminal, the second terminal and the control terminal of the first set of transistors, respectively. when the semiconductor device is in a steady state, the bulk terminal of the second set of transistors is decoupled from the bias terminal. when the semiconductor device is in a transient state, the bulk terminal of the second set of transistors is coupled to the bias terminal.

Inventor(s): Yu-Hsuan Chao, Chih-Sheng Chen

CPC Classification: H03F1/26 (Modifications of amplifiers to reduce influence of noise generated by amplifying elements)

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