Semiconductor Device and Method

Abstract: methods for forming under-bump metallurgy (ubm) structures having different surface profiles and semiconductor devices formed by the same are disclosed. in an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a first under-bump metallurgy (ubm) structure over and electrically coupled to the first redistribution line, the first ubm structure extending through the first passivation layer, a top surface of the first ubm structure being concave; and a second ubm structure over and electrically coupled to the second redistribution line, the second ubm structure extending through the first passivation layer, a top surface of the second ubm structure being flat or convex.

Inventor(s): Ting-Li Yang, Po-Hao Tsai, Ming-Da Cheng, Yung-Han Chuang, Hsueh-Sheng Wang

CPC Classification: H01L24/03 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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