CONTACT STRUCTURES FOR THREE-DIMENSIONAL MEMORY

Abstract: embodiments of 3d memory structures and methods for forming the same are disclosed. the fabrication method includes disposing an alternating dielectric stack on a substrate, wherein the alternating dielectric stack having first and second dielectric layers alternatingly stacked on top of each other. next, a plurality of contact openings can be formed in the alternating dielectric stack such that a dielectric layer pair can be exposed inside at least one of the plurality of contact openings. the method further includes forming a film stack of alternating conductive and dielectric layers by replacing the second dielectric layer with a conductive layer, and forming a contact structure to contact the conductive layer in the film stack of alternating conductive and dielectric layers.

Inventor(s): Zhongwang SUN, Zhong ZHANG, Wenxi ZHOU, Lei LIU, Zhiliang XIA

CPC Classification: H01L23/535 (including internal interconnections, e.g. cross-under constructions {(internal lead connections )})

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