INTEGRATED CIRCUIT STRUCTURE WITH BACKSIDE VIA

Abstract: an integrated circuit (ic) structure includes a gate structure, a source epitaxial structure, a drain epitaxial structure, a front-side interconnection structure, a backside dielectric layer, an epitaxial regrowth layer, and a backside via. the source epitaxial structure and the drain epitaxial structure are respectively on opposite sides of the gate structure. the front-side interconnection structure is over a front-side of the source epitaxial structure and a front-side of the drain epitaxial structure. the backside dielectric layer is over a backside of the source epitaxial structure and a backside of the drain epitaxial structure. the epitaxial regrowth layer is on the backside of a first one of the source epitaxial structure and the drain epitaxial structure. the backside via extends through the backside dielectric layer and overlaps the epitaxial regrowth layer.

Inventor(s): Pei-Yu Wang, Yu-Xuan Huang

CPC Classification: H01L23/5226 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

Search for rejections for patent application number 20250183159