MIM CAPACITOR DISPOSED IN MODIFIED DUAL DAMASCENE STRUCTURE AND FABRICATING METHOD OF THE SAME

Abstract: an mim capacitor disposed in a modified dual damascene structure includes a dielectric layer, and a first modified dual damascene structure is disposed in the dielectric layer. the first modified dual damascene structure includes a trench and a hole, and the hole connects to the trench. the hole includes a funnel profile. an mim capacitor is disposed in the first modified dual damascene structure and a first copper layer is disposed in the first modified dual damascene structure and is located on the mim capacitor.

Inventor(s): Tai-Cheng Hou, Da-Jun LIN, Fu-Yu Tsai, Bin-Siang Tsai

CPC Classification: H01L23/5223 (SEMICONDUCTOR DEVICES NOT COVERED BY CLASS (use of semiconductor devices for measuring ; resistors in general ; magnets, inductors or transformers ; capacitors in general ; electrolytic devices ; batteries or accumulators ; waveguides, resonators or lines of the waveguide type ; line connectors or current collectors ; stimulated-emission devices ; electromechanical resonators ; loudspeakers, microphones, gramophone pick-ups or like acoustic electromechanical transducers ; electric light sources in general ; printed circuits, hybrid circuits, casings or constructional details of electrical apparatus, manufacture of assemblages of electrical components ; use of semiconductor devices in circuits having a particular application, see the subclass for the application))

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