SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Abstract: a semiconductor device that is a surface mount-type device includes a nitride semiconductor chip including a silicon substrate having a first thermal expansion coefficient and an ingaaln layer in contact with a surface of the silicon substrate, where 0≤x≤1, 0≤y≤1, 0≤x+y≤1; and a die pad including cu and having a second thermal expansion coefficient that is greater than the first thermal expansion coefficient. a thickness of the nitride semiconductor chip is at least 0.2 mm, length l of the nitride semiconductor chip is at least 3.12 mm, and thickness tm of the die pad and length l of the nitride semiconductor chip satisfy tm≥2.00�10�l+0.173, tm being a thickness in mm and l being a length in mm.

Inventor(s): Hidekazu NAKAMURA, Manabu YANAGIHARA, Tomohiko NAKAMURA, Yusuke KATAGIRI, Katsumi OTANI, Takeshi KAWABATA

CPC Classification: H01L23/49513 (Lead-frames {or other flat leads ( takes precedence; lead frame interconnections between components )})

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