SEMICONDUCTOR STRUCTURE AND FABRICATION METHOD THEREOF

Abstract: a method for forming a semiconductor structure is disclosed. a substrate having a front surface and a rear surface is provided. a plurality of trenches extending into the substrate from the front surface of the substrate is formed. a polishing stop structure is formed at a bottom of each of the plurality of trenches. the plurality of trenches is filled with a gap-filling material layer. the rear surface of the substrate is subjected to a polishing process to remove a portion of the substrate from the rear surface until the polishing stop structure is exposed.

Inventor(s): XIAO GUO, Xingxing CHEN, Ching-Yang Wen, Purakh Raj Verma

CPC Classification: H01L21/76283 (Dielectric regions {, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers})

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