PROCESSING METHOD AND PROCESSING SYSTEM

Abstract: a processing method of selectively etching an oxygen-containing film in a substrate having the oxygen-containing film and a nitrogen-containing film formed on a surface of the substrate, wherein the method includes: forming an ammonium fluorosilicate layer by selectively modifying the oxygen-containing film with respect to the nitrogen-containing film by using process gases including a fluorine-containing gas and a hydrazine-based gas; and removing the ammonium fluorosilicate layer by heating the substrate.

Inventor(s): Mitsuhiro TACHIBANA

CPC Classification: H01L21/31116 ({by dry-etching})

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