SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Abstract: a substrate processing method includes: etching a germanium-containing silicon film by supplying an etching gas for a germanium-containing silicon to a substrate on which the germanium-containing silicon film and a silicon film are formed; and subsequently, removing an etching residue of the germanium-containing silicon film while purging the etching gas from the substrate by supplying, to the substrate, a purge gas including a first processing gas containing fluorine and a second processing gas containing at least one of ammonia or amine.

Inventor(s): Nobuhiro TAKAHASHI, Ayano HAGIWARA, Tomoaki FUKUDA, Kento SUZUKI

CPC Classification: H01L21/30604 (Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers ))

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