SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS

Abstract: a substrate processing method includes an ozone gas etching step of etching an amorphous carbon film in a state in which a front surface of a substrate is dry by supplying ozone gas as etching gas to the amorphous carbon film formed on the front surface of the substrate while heating the substrate and a sulfuric acid-ozone etching step of etching the amorphous carbon film by supplying, after the ozone gas is supplied to the amorphous carbon film, the amorphous carbon film with ozone-containing sulfuric acid that is sulfuric acid in which ozone gas as dissolved gas is dissolved.

Inventor(s): Tsung Ju LIN, Shuichi SHIBATA, Yu YAMAGUCHI

CPC Classification: H01L21/30604 (Chemical or electrical treatment, e.g. electrolytic etching (to form insulating layers ))

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