20250183031. Method Processing (Infineon Technologies AG)
METHOD OF PROCESSING A SEMICONDUCTOR WAFER
Abstract: a method of processing a semiconductor wafer includes: forming one or more epitaxial layers over a first main surface of the semiconductor wafer; forming one or more porous layers in the semiconductor wafer or in the one or more epitaxial layers, wherein the semiconductor wafer, the one or more epitaxial layers and the one or more porous layers collectively form a substrate; forming doped regions of a semiconductor device in the one or more epitaxial layers; and after forming the doped regions of the semiconductor device, separating a non-porous part of the semiconductor wafer from a remainder of the substrate along the one or more porous layers.
Inventor(s): Bernhard Goller, Alexander Binter, Tobias Hoechbauer, Martin Huber, Iris Moder, Matteo Piccin, Francisco Javier Santos Rodriguez, Hans-Joachim Schulze
CPC Classification: H01L21/02293 ({formation of epitaxial layers by a deposition process (epitaxial growth per se )})
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- Patent Applications
- Infineon Technologies AG
- CPC H01L21/02293
- Bernhard Goller of Villach AT
- Alexander Binter of Villach AT
- Tobias Hoechbauer of Villach AT
- Martin Huber of Villach AT
- Iris Moder of Villach AT
- Matteo Piccin of Villach AT
- Francisco Javier Santos Rodriguez of St.Jakob im Rosental AT
- Hans-Joachim Schulze of Taufkirchen DE