METHOD FOR REMOVING PARTICLES OF ION BEAM ETCHING SYSTEM, AND ION BEAM ETCHING SYSTEM

Abstract: a method and apparatus for removing particles of an ion beam etching system. the ion beam etching system includes: a first grid configured to connect a positive voltage generated by a first dc power supply; a second grid configured to connect a negative voltage generated by a second dc power supply; a third grid configured to connect a positive voltage generated by a third dc power supply; a neutralizer located above the third grid and configured to generate electrons; and an air extraction hole located below the third grid and connected to a molecular pump. the first grid and the second grid are configured to accelerate plasma in a reaction chamber, and the third grid is located on a side of the second grid away from the first grid.

Inventor(s): Xiang WANG, Xiaobo LIU, Hongbo SUN, Yang DOU, Yinan WANG, Dongdong HU, Lu CHEN, Kaidong XU

CPC Classification: H01J37/32871 (Gas-filled discharge tubes (heating by discharge ))

Search for rejections for patent application number 20250183017