PLASMA PROCESSING APPARATUS

Abstract: provided is a plasma processing apparatus. the plasma processing apparatus includes a chamber where a wafer is configured to be mounted, a source power configured to provide a source voltage to generate a plasma in the chamber, a multi-level pulse circuit configured to generate a wafer voltage to accelerate ions in the plasma, and generate a pulse signal including a first pulse voltage, a second pulse voltage having a level lower than the first pulse voltage, and a third pulse voltage different from the first and second pulse voltages and having a level higher than the second pulse voltage, which are sequentially output, and an arbitrary voltage compensation circuit configured to provide a compensation voltage non-linearly changed to at least one of the first to third pulse voltages.

Inventor(s): Hwasoo SEOK, Sungyong LIM, Yongwon CHO, Kyung-Sun KIM, Nam Kyun KIM, Sung-Yeol KIM, Donghyeon NA

CPC Classification: H01J37/32146 (Gas-filled discharge tubes (heating by discharge ))

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