20250182835. Semiconductor Memory Devices Diode-connected (Taiwan Semiconductor Manufacturing , .)

SEMICONDUCTOR MEMORY DEVICES WITH DIODE-CONNECTED MOS

Abstract: a memory device and a method of operating a memory device are disclosed. in one aspect, the memory device includes a plurality of non-volatile memory cells, each of the plurality of non-volatile memory cells is operatively coupled to a word line, a gate control line, and a bit line. each of the plurality of non-volatile memory cells comprises a first transistor, a second transistor, a first diode-connected transistor, and a capacitor. the first transistor, second transistor, first diode-connected transistor are coupled in series, with the capacitor having a first terminal connected to a common node between the first diode-connected transistor and the second transistor.

Inventor(s): Perng-Fei Yuh, Tung-Cheng Chang, Gu-Huan Li, Chia-En Huang, Chun-Ying Lee, Yih Wang

CPC Classification: G11C17/16 (using electrically-fusible links)

Search for rejections for patent application number 20250182835