WRITE ASSIST CIRCUIT FOR MEMORY DEVICE

Abstract: a device is provided. the device includes a memory cell and a first write assist circuit. the memory cell operates with a first supply voltage and a second supply voltage different from the first supply voltage. the first write assist circuit includes a first write assist switch and a second write assist switch that are coupled to the memory cell through a first data line. in a write operation of a data, having a first logic value, to the memory cell, the first write assist switch transmits the first supply voltage to the first data line in response to a first control signal, received at a control terminal of the first write assist switch and having a voltage level of the second supply voltage, when the second write assist switch is configured to be turned off.

Inventor(s): Chia-Che CHUNG, Hsin-Cheng LIN, Chee-Wee LIU

CPC Classification: G11C11/419 (forming {static} cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger)

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