DEPOSITION OF RESIST UNDERLAYER FOR ENHANCING PHOTORESIST PERFORMANCE

Abstract: the present disclosure generally relate to the field of semiconductor processing and, in particular, to methods of forming a resist underlayer for use in euv lithography processing. in some embodiments, the present disclosure provides a method for forming a resist underlayer having improved adhesion using a resist underlayer agent. in some embodiments, the resist underlayer is formed using the resist underlayer agent in a uv-assisted deposition process.

Inventor(s): Guangyan ZHONG, Sudha RATHI, Pramit MANNA, Abhijit B. MALLICK

CPC Classification: G03F7/11 (having cover layers or intermediate layers, e.g. subbing layers {( - , take precedence)})

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