RESIST COMPOSITION, RESIST PATTERN FORMATION METHOD, COMPOUND, AND POLYMER COMPOUND

Abstract: a resist composition which generates an acid upon light exposure and whose solubility in a developing solution is changed by an action of an acid, the resist composition including a resin component whose solubility in a developing solution is changed by an action of an acid, in which the resin component has a constitutional unit represented by general formula (a0-1) in which r represents a hydrogen atom, an alkyl group having 1 to 5 carbon atoms, a halogen atom, or a halogenated alkyl group having 1 to 5 carbon atoms; yarepresents a single bond or a divalent linking group; varepresents a single bond or a linear or branched alkylene group; and m represents an m-valent cation

Inventor(s): Junichi Miyakawa, Yohei Adachi, Tetsuo Fujinami, Shuichi Ishii

CPC Classification: G03F7/0397 (Macromolecular compounds which are photodegradable, e.g. positive electron resists ( takes precedence; macromolecular quinonediazides ))

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