METHOD, SYSTEM AND ELECTRONIC APPARATUS FOR MASK FEATURE OPTIMIZATION

Abstract: the disclosure provides a method and system for mask feature optimization and belongs to the field of computational lithography. the method includes: acquiring a new contour after the edges of the main pattern of a mask are moved inward or outward by a predetermined distance; setting a region inside the new contour as the shadow region when the movement is an inward movement and setting a region outside the new contour as the shadow region when the movement is an outward movement; screening an acquired mask gradient field solved by inverse lithography based on the shadow region to keep only the mask gradient field inside the region; and generating a sub resolution assist/inverse feature of the mask based on the screened mask gradient field.

Inventor(s): Haiqing Wei

CPC Classification: G03F1/36 (PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR; (phototypographic composing devices ; photosensitive materials or processes for photographic purposes ; electrophotography, sensitive layers or processes therefor ))

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