EPITAXIAL SILICON WAFER AND METHOD FOR PRODUCING THE SAME

Abstract: an epitaxial silicon wafer comprises a silicon wafer in which the entire surface, excluding an edge region from the outermost edge to 2 mm inward, is a cop region, and an epitaxial silicon layer formed on the surface of the silicon wafer. the average cop size in the peripheral region, located within 5 mm inward from the outermost edge of the silicon wafer, is 75 nm or less.

Inventor(s): Masayuki MIURA

CPC Classification: C30B25/20 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, ); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys ); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices ; working of plastics ; modifying the physical structure of metals or alloys , ); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof , ); APPARATUS THEREFOR)

Search for rejections for patent application number 20250179686