SILICON CARBIDE PLATFORMS AND THE MANUFACTURE THEREOF THROUGH SILICON CARBIDE EPITAXY ON SILICON

Abstract: a method of manufacturing a silicon-carbide platform comprises providing a base comprising a silicon seed layer having a (001) crystal lattice plane and a top surface parallel to the (001) crystal lattice plane and forming a silicon-carbide epitaxial layer by epitaxial growth directly on the top surface of the silicon seed layer. a silicon-on-insulator substrate may be used to form the silicon-carbide platform in some implementations. the silicon-carbide epitaxial layer may be grown by epitaxial lateral overgrowth over a mask layer in some implementations. the silicon-carbide platform may comprise additional layers, such as a ill-v semiconductor layer disposed on and bonded to the silicon-carbide epitaxial layer in some implementations. the silicon-carbide epitaxial layer may be buried between two other layers in some implementations.

Inventor(s): Sagi Varghese Mathai

CPC Classification: C30B25/04 (SINGLE-CRYSTAL GROWTH (by using ultra-high pressure, e.g. for the formation of diamonds, ); UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL (zone-refining of metals or alloys ); PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (casting of metals, casting of other substances by the same processes or devices ; working of plastics ; modifying the physical structure of metals or alloys , ); SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE (for producing semiconductor devices or parts thereof , ); APPARATUS THEREFOR)

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