Apparatus and Method for Plasma Enhanced Chemical Vapour Deposition

Abstract: the present invention relates to a linear plasma source assembly for plasma enhanced chemical vapour deposition comprising: a) a linear plasma source with first end and a second end comprising an antenna and an co-axial shielding element; and b) at least two gas manifolds, each comprising: at least one first gas conduit(s) provided with at least one first gas outlet ports for providing one or more first gaseous substances to a chemical vapour deposition chamber; and at least one exhaust gas conduit(s) each provided with at least two exhaust gas inlet port(s) for removing one or more exhaust gaseous substances from a chemical vapour deposition chamber.

Inventor(s): Pavel Kudlacek, Arjen Peter Didden

CPC Classification: C23C16/511 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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