GAS INTAKE DEVICE, THIN FILM DEPOSITION DEVICE, AND THIN FILM DEPOSITION METHOD

Abstract: a gas intake device is connected to a gas supply device. the gas intake device includes: a gas intake assembly for inputting reaction gas supplied by the gas supply device into a reaction chamber; and a velocity regulation assembly provided between the gas intake assembly and the gas supply device or at a gas outlet end of the gas intake assembly, for increasing a velocity of the reaction gas being input into the reaction chamber. since the velocity of the reaction gas being input into the reaction chamber is increased, a point on the wafer at which a vector sum of the velocity of the point and the gas intake velocity of the reaction gas is 0 is eliminated.

Inventor(s): Yingying ZHANG

CPC Classification: C23C16/45561 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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