SURFACE INHIBITION ATOMIC LAYER DEPOSITION

Abstract: atomic layer deposition (ald) of dielectric material in gaps that facilitates void-free bottom-up gap fill can involve flowing a reaction inhibitor during the ald process. in some embodiments, the reaction inhibitor is flowed during at least part of a plasma operation of a plasma-enhanced ald (peald) process.

Inventor(s): Tao ZHANG, Pulkit AGARWAL, Joseph R. ABEL, Shiva Sharan BHANDARI, Jennifer Leigh PETRAGLIA

CPC Classification: C23C16/45534 (COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL (making metal-coated products by extrusion ; covering with metal by connecting pre-existing layers to articles, see the relevant places, e.g. , ; metallising of glass ; metallising mortars, concrete, artificial stone, ceramics or natural stone ; enamelling of, or applying a vitreous layer to, metals ; treating metal surfaces or coating of metals by electrolysis or electrophoresis ; single-crystal film growth ; by metallising textiles ; decorating textiles by locally metallising ))

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