SUBSTRATE POLISHING METHOD

Abstract: the present invention relates to a substrate polishing method of polishing a substrate, such as a wafer. the substrate polishing method includes: rotating a substrate (w) about its own axis, while causing the substrate (w) and a polishing head (c) to make a circular motion relative to each other; and pressing a polishing tape (b) against a surface () of the substrate (w) by the polishing head (c) while feeding the polishing tape (b) in a longitudinal direction thereof to thereby polish a central region including a center (o) of the substrate (w) and an outer region adjacent to the central region. a process of polishing the central region and the outer region includes at least two polishing processes performed under different polishing conditions. the at least two polishing processes include: a low polishing-rate process performed under a polishing condition such that a polishing rate in the central region is lower than a polishing rate in the outer region; and a high polishing-rate process performed under a polishing condition such that a polishing rate in the central region is higher than a polishing rate in the outer region.

Inventor(s): Satoru YAMAMOTO, Keisuke UCHIYAMA, Makoto KASHIWAGI, Mao FUJISAWA

CPC Classification: B24B21/06 (MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING (grinding of gear teeth , of screw-threads ; by electro-erosion ; abrasive or related blasting ; tools for grinding, buffing or sharpening ; polishing compositions ; abrasives ; electrolytic etching or polishing ; grinding arrangements for use on assembled railway tracks ); DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS)

Search for rejections for patent application number 20250178150