RESISTIVE MEMORY CELL HAVING A LOW FORMING VOLTAGE

Abstract: various embodiments of the present disclosure are directed towards an integrated chip including a first conductive structure over a substrate. a second conductive structure is over the first conductive structure. a data storage layer is between the first conductive structure and the second conductive structure. the data storage layer comprises a metal oxide of a first metal. the metal oxide comprises a nonmetal dopant and a metal dopant. the metal dopant is different from the first metal.

Inventor(s): Hai-Dang Trinh, Chii-Ming Wu, Hsing-Lien Lin, Tzu-Chung Tsai, Fa-Shen Jiang, Bi-Shen Lee

CPC Classification: H10N70/8833 ()

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