FILM STRUCTURE AND ELECTRONIC DEVICE

Abstract: a film structure () includes a si layer (), a zrolayer (), which is a buffer film containing zro, formed on the si layer (), and a piezoelectric film () formed on the zrolayer (). the si layer is an soi layer on a si(100) substrate or an soi substrate including a base made of a si substrate, an insulating layer on the base, and an soi layer made of a si(100) film on the insulating layer. the piezoelectric film () includes c-axis oriented linboor litao.

Inventor(s): Takeshi IIZUKA, Akira ANDO, Akio KONISHI

CPC Classification: H10N30/708 ()

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