LIGHT EMITTING DIODE AND LIGHT EMITTING DEVICE

Abstract: a light emitting diode includes a semiconductor stacked layer, including a first semiconductor layer, a light-emitting layer and a second semiconductor layer sequentially stacked in that order, and having a mesa being an upper surface of the first semiconductor layer that is not covered by the light-emitting layer; and an insulation structure, covering the semiconductor stacked layer, and having a first opening located on the mesa and a second opening located on the second semiconductor layer. the semiconductor stacked layer defines a dimple at the mesa. the first semiconductor layer has a first sloped sidewall at the dimple, the insulation structure has a second sloped sidewall at the mesa, an angle between the first sloped sidewall and a horizontal plane is first angle, an angle between the second sloped sidewall and the horizontal plane is second angle, and the first angle is smaller than or equal to the second angle.

Inventor(s): Xiushan ZHU, Yan LI, Qi JING, Zhihao BAO, Qingchao YANG, Chunhsien LEE, Chi-Ming TSAI, Juchin TU, Chung-Ying CHANG

CPC Classification: H10H20/831 (No explanation available)

Search for rejections for patent application number 20250176318