PIXEL SENSOR WITH MULTI-PROTRUSION TRANSFER GATE

Abstract: a pixel sensor includes a photodiode including an anode overlying a cathode positioned in a substrate and a transfer transistor structure including a source region extending along a surface of the substrate adjacent to the anode and overlying the cathode, a floating diffusion region extending along the surface of the substrate parallel to the source region, and a gate conductor including an array of conductive protrusions extending into the substrate between the source region and the floating diffusion region.

Inventor(s): Kun-Huei LIN, Yun-Wei CHENG, Chun-Hao CHOU, Kuo-Cheng LEE, Chun-Wei CHIA

CPC Classification: H10F39/80373 (No explanation available)

Search for rejections for patent application number 20250176287