IMAGE SENSING DEVICE AND METHOD FOR MANUFACTURING THE SAME

Abstract: image sensing devices are disclosed. in an embodiment, an image sensing device may include: a substrate; a photodiode formed in the substrate; a transfer transistor formed on the substrate; and an oxide transistor formed over the transfer transistor, and the oxide transistor may include: a gate electrode formed over the transfer transistor; a gate isolation layer formed on the gate electrode; an oxide layer formed on the gate isolation layer; a first electrode formed on one side of the oxide layer; and a second electrode formed on another side of the oxide layer.

Inventor(s): Hyo Jun KWON, Hyun Soo LIM

CPC Classification: H10F39/80373 (No explanation available)

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