Backside Illumination Global Shutter Image Sensor with Trench Storage Gate

Abstract: an image sensor may include an array of global shutter image pixels arranged in rows and columns. each global shutter image pixel may include a storage gate implemented as a trench transistor. the storage gate may be at least partially covered by a corresponding backside deep trench isolation structure. the deep trench isolation structure can be filled with light-shielding material. configured in this way, the global shutter image pixel exhibits improved global shutter efficiency.

Inventor(s): John P. MCCARTEN, Hung Q. DOAN, Konstantin G. KORABLEV

CPC Classification: H10F39/199 (No explanation available)

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