ELECTROSTATIC DISCHARGE PROTECTION DEVICE

Abstract: an electrostatic discharge protection device is provided. the electrostatic discharge protection device includes a semiconductor substrate, first and second well regions, and first and second heavily doped regions. the first and second well regions have a first conductivity type and are located in the semiconductor substrate. the first heavily doped region on the first well region has a second conductivity type. a first bottom of the first well region and a second bottom of the second well region are connected to each other and have different profiles. the first and second well regions have different doping concentrations. the second heavily doped region on the second well region has the first conductivity type. the first and second heavily doped regions are arranged side-by-side and are spaced apart from each other. the first heavily doped region is electrically connected to an input/output terminal.

Inventor(s): Tzung-Lin LI, Yuan-Fu CHUNG, Tung-Hsing LEE

CPC Classification: H10D89/611 (No explanation available)

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