SEMICONDUCTOR DEVICE

Abstract: the stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. moreover, the concentration of impurities in a semiconductor film is reduced. moreover, the electrical characteristics of a semiconductor device are improved. in a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film.

Inventor(s): Shunpei YAMAZAKI, Junichi KOEZUKA, Yasutaka NAKAZAWA, Yukinori SHIMA, Masami JINTYOU, Masayuki SAKAKURA, Motoki NAKASHIMA

CPC Classification: H10D86/60 (No explanation available)

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